In this project numerically simulated Dual material Double gate MOSFETs structure through ATLAS device simulator. Analysis and comparative study of the electrical characteristics of DMDG MOSFETs with that of conventional SOI MOSFETs has been done. DMDG MOSFETs has become a important part of VLSI research. An analytical model is developed using ATLAS simulator to analyze short channel effects (SCE),threshold voltage, potential [login to view URL] structure was designed and some possible errors were optimized